MOSFET nonvolatile memory with high-density cobalt-nanodots floating gate and HfO\bf 2 High-k blocking dielectric

Yanli Pei, Chengkuan Yin, Toshiya Kojima, Ji Cheol Bea, Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We report high-performance MOSFET nonvolatile memory with high-density cobalt-nanodots (Co-NDs) floating gate (the density is as high as 45 10 12 /cm-2 and the size is 2 nm) and HfO2 high-k blocking dielectric. The device is fabricated using a gate-last process. A large memory window, high-speed program/erase (P/E), long retention time, and excellent endurance till 10-6 P/E cycles are obtained. In addition, the discrete Co-NDs make dual-bit operation successful. The high performance suggests that high work-function Co-NDs combined with high-k blocking dielectric have a potential as a next-generation nonvolatile-memory candidate.

本文言語English
論文番号5466197
ページ(範囲)528-531
ページ数4
ジャーナルIEEE Transactions on Nanotechnology
10
3
DOI
出版ステータスPublished - 2011 5

ASJC Scopus subject areas

  • コンピュータ サイエンスの応用
  • 電子工学および電気工学

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