We report high-performance MOSFET nonvolatile memory with high-density cobalt-nanodots (Co-NDs) floating gate (the density is as high as 45 10 12 /cm-2 and the size is 2 nm) and HfO2 high-k blocking dielectric. The device is fabricated using a gate-last process. A large memory window, high-speed program/erase (P/E), long retention time, and excellent endurance till 10-6 P/E cycles are obtained. In addition, the discrete Co-NDs make dual-bit operation successful. The high performance suggests that high work-function Co-NDs combined with high-k blocking dielectric have a potential as a next-generation nonvolatile-memory candidate.
ASJC Scopus subject areas
- コンピュータ サイエンスの応用