MOSFET nonvolatile memory with a high-density tungsten nanodot floating gate formed by self-assembled nanodot deposition

Y. Pei, C. Yin, Jichoru Be, Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Metal-oxide-semiconductor field-effect transistor (MOSFET) nonvolatile memories with high-density tungsten nanodots (W-NDs) dispersed in silicon nitride as a floating gate were fabricated and characterized. The W-NDs with a high density of ∼5 × 1012 cm-2 and small sizes of 2-3 nm were formed by self-assembled nanodot deposition (SAND). A large memory window of ∼1.7 V was observed with bi-directional gate voltage sweeping between -10 and +10 V. Considering that there is no hysteresis memory window for the reference sample without W-NDs, this result indicates the charge trapping in W-NDs or related defects. Finally, the program/erase speed and retention characteristics were investigated and discussed in this paper.

本文言語English
論文番号045022
ジャーナルSemiconductor Science and Technology
24
4
DOI
出版ステータスPublished - 2009 8 24

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

フィンガープリント

「MOSFET nonvolatile memory with a high-density tungsten nanodot floating gate formed by self-assembled nanodot deposition」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル