Morphology of hydrofluoric acid and ammonium fluoride-treated silicon surfaces studied by surface infrared spectroscopy

M. Niwano, Y. Takeda, Y. Ishibashi, K. Kurita, N. Miyamoto

研究成果: Article査読

38 被引用数 (Scopus)

抄録

Morphologies of Si surfaces treated with aqueous solutions of hydrofluoric acid (HF) and ammonium fluoride (NH4F) have been investigated using surface infrared spectroscopy. We confirm that HF-treated Si(111) surfaces are terminated with a monohydride (Si - H), dihydride (Si - H2), and trihydride (Si-H3), whereas NH4F-treated Si(111) surfaces are dominantly terminated with Si - H. For Si(100), treatment in NH4F produces a surface for which the dihydride mode is enhanced compared to HF treatment, suggesting that surface Si - Si bonds on Si(100) are readily cleaved in a NH4F solution to generate a dihydride Si. The effect of varying the HF concentration on the morphology of HF-treated Si(100) surfaces is investigated. It is demonstrated that 5% HF treatment produces Si(100) surfaces which have a larger density of surface Si - Si bonds than 50% HF or 0.5% HF treatment.

本文言語English
ページ(範囲)5646-5649
ページ数4
ジャーナルJournal of Applied Physics
71
11
DOI
出版ステータスPublished - 1992 12月 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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