Monolithic fabrication of film bulk acoustic resonators above integrated circuit by adhesive-bonding-based film transfer

Abhay Kochhar, Takeshi Matsumura, Guoqiang Zhang, Ramesh Pokharel, Ken Ya Hashimoto, Masayoshi Esashi, Shuji Tanaka

研究成果: Conference contribution

13 被引用数 (Scopus)

抄録

An integration process for the fabrication of thin film bulk acoustic wave resonator (FBAR) above the CMOS IC is proposed. An adhesive-bonding-based film transfer technique is utilized to transfer high resistivity Si film onto a CMOS chip. Benzocyclobutene (BCB) is used as an adhesive film. It is a heat resistive polymer and processes of temperature up to 300°C are allowed on it. The CMOS is protected by BCB and thus is not damaged by plasma and chemical treatments. The transferred Si film offers flat and stable surface which is utilized for the deposition of ruthenium, aluminum nitride & aluminum to fabricate the FBAR structure. Finally, Si underneath the active device area is sacrificially etched to fabricate the air gap type FBAR. In this paper, we present the fabrication process and discuss important issues related to the fabrication.

本文言語English
ホスト出版物のタイトル2012 IEEE International Ultrasonics Symposium, IUS 2012
ページ1047-1050
ページ数4
DOI
出版ステータスPublished - 2012 12 1
イベント2012 IEEE International Ultrasonics Symposium, IUS 2012 - Dresden, Germany
継続期間: 2012 10 72012 10 10

出版物シリーズ

名前IEEE International Ultrasonics Symposium, IUS
ISSN(印刷版)1948-5719
ISSN(電子版)1948-5727

Other

Other2012 IEEE International Ultrasonics Symposium, IUS 2012
国/地域Germany
CityDresden
Period12/10/712/10/10

ASJC Scopus subject areas

  • 音響学および超音波学

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