Monitoring of inner wall condition in mass-production plasma etching process using a load impedance monitoring system

Yuji Kasashima, Hiroyuki Kurita, Naoya Kimura, Akira Ando, Fumihiko Uesugi

研究成果: Article査読

4 被引用数 (Scopus)

抄録

This work describes the detection of changes in the inner wall condition of mass-production plasma etching equipment using a load impedance monitoring system. The system detects the change in the imaginary part of the load impedance from a 50-Ω transmission line when the inner wall condition changes following exposure to the atmosphere. The results demonstrate that the system can be used as a practical method for real-time and noninvasive monitoring of the wall condition of etching chambers. This method will contribute to improvements in production yield and overall equipment effectiveness, and the development of predictive maintenance in semiconductor manufacturing.

本文言語English
論文番号060301
ジャーナルJapanese journal of applied physics
54
6
DOI
出版ステータスPublished - 2015 6 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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