TY - JOUR
T1 - MOLYBDENUM FILM FORMATION BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION.
AU - Yasuda, Kazumitsu
AU - Murota, Junichi
PY - 1983
Y1 - 1983
N2 - A new low pressure chemical vapor deposition apparatus for molybdenum film formation by the hydrogen reduction of molybdenum pentachloride is developed. The apparatus realizes the uniformity of film thickness within plus or minus 5% for 25 wafers per batch and molybdenum film formation without oxidation. It is found that the deposition rate is controlled by surface reaction up to a higher temperature than that under atmospheric pressure and is proportional to the 3/2 power of hydrogen partial pressure in the region of surface reaction.
AB - A new low pressure chemical vapor deposition apparatus for molybdenum film formation by the hydrogen reduction of molybdenum pentachloride is developed. The apparatus realizes the uniformity of film thickness within plus or minus 5% for 25 wafers per batch and molybdenum film formation without oxidation. It is found that the deposition rate is controlled by surface reaction up to a higher temperature than that under atmospheric pressure and is proportional to the 3/2 power of hydrogen partial pressure in the region of surface reaction.
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U2 - 10.1143/jjap.22.l615
DO - 10.1143/jjap.22.l615
M3 - Article
AN - SCOPUS:0020830287
SN - 0021-4922
VL - 22
SP - 615
EP - 617
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 10
ER -