The effects of stress on the Raman frequencies of crystalline silicon are studied using molecular dynamics simulation both for uniaxial stress along the  direction and for biaxial stress which is Isotropic in the (001) plane. The Tersoff potential is used to represent the interaction among the silicon atoms. Simulation results showed that the tensile stress causes the Raman frequencies to decrease. The conversion coefficients that are needed for converting the shifts of the Raman frequencies into the stress were obtained by comparing the simulation results with the dynamical equations for optical modes. The values obtained for the coefficients agreed well with the experimental values obtained by other works. The obtained relationship between the uniaxial stress and the Raman frequency for vibration in the  direction also agreed well with the experimental result we obtained using microscopic Raman spectroscopy.
|ジャーナル||JSME International Journal, Series A: Mechanics and Material Engineering|
|出版ステータス||Published - 1998|
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