Molecular dyanamics simulation of thermal chemical vapor deposition for hydrogenated amorphous silicon on si (100) substrate by reactive force-field

Naoya Uene, Takuya Mabuchi, Masaru Zaitsu, Shigeo Yasuhara, Takashi Tokumasu

研究成果: Conference contribution

抄録

We calculate a deposition process of hydrogenated amorphous silicon (a-Si:H) films on a silicon (100) substrate by reactive force-field molecular dynamics simulations. The influences of (a) substrate temperatures and (b) coverage of hydrogen atoms on the substrate on the adsorption probability are investigated, and it is found out that (a) the adsorption probability is almost constant for SiH2 and SiH3, but decrease with increase in the substrate temperature for SiH4, (b) it decreases with the increase in hydrogen coverage.

本文言語English
ホスト出版物のタイトルProceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
編集者Francesco Driussi
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781728109404
DOI
出版ステータスPublished - 2019 9
イベント24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 - Udine, Italy
継続期間: 2019 9 42019 9 6

出版物シリーズ

名前International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2019-September

Conference

Conference24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
国/地域Italy
CityUdine
Period19/9/419/9/6

ASJC Scopus subject areas

  • 電子工学および電気工学
  • コンピュータ サイエンスの応用
  • モデリングとシミュレーション

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