Molecular beam epitaxy of ErGaAs alloys on GaAs (0 0 1) substrates

Ri Guo Jin, Shuhei Yagi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi

研究成果: Article査読

1 被引用数 (Scopus)

抄録

We have successfully grown high crystalline quality ErGaAs alloy layers by solid-source molecular beam epitaxy. The X-ray diffraction (XRD) peak of ErGaAs alloys was found to shift systematically from the GaAs peak with increasing Er concentration up to 3.7%. XRD (1 1 5) reciprocal space map measurements revealed that the ErGaAs epitaxial layer is coherently grown on GaAs. We found from XRD results that ErGaAs alloys with low Er concentrations tend to crystallize in the zincblende structure.

本文言語English
ページ(範囲)85-87
ページ数3
ジャーナルJournal of Crystal Growth
378
DOI
出版ステータスPublished - 2013 1 1
外部発表はい

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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