We attempted to grow Co xFe 4-xN epitaxial thin films on SrTiO 3(001) substrates by molecular beam epitaxy supplying solid Co and Fe and a radio frequency N 2 plasma, simultaneously. The composition ratio of Co/Fe in Co xFe 4-xN was controlled by changing the weight ratio of Co to Fe flakes in the crucible of the Knudsen cell used. We confirmed epitaxial growth of Co xFe 4-xN (0.4<x<2.9) thin films by reflection high-energy electron diffraction and θ-2θ X-ray diffraction patterns. The in-plane lattice parameter of the Co xFe 4-xN films was almost the same as the out-of-plane lattice parameter, and they decreased with increasing Co composition, following Vegard's law.
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