Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors

研究成果: Conference contribution

抄録

Owing to the nonmagnetic nature of III-V compounds magnetic cooperative phenomena were not a part of the rich soil of III-V heterostructures in the past. The synthesis of magnetic III-V semiconductors and subsequent discovery of carrier-induced ferromagnetism in them now allows us to combine ferromagnetism with the properties of III-V heterostructures. Here, I describe molecular beam epitaxy of ferromagnetic III/V's, a mean-field model for the carrier-induced ferromagnetism in them, and isothermal and reversible electric field control of carrier-induced ferromagnetism in a ferromagnetic semiconductor (In,Mn)As.

本文言語English
ホスト出版物のタイトルMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
出版社Institute of Electrical and Electronics Engineers Inc.
ページ9-10
ページ数2
ISBN(電子版)0780375815, 9780780375819
DOI
出版ステータスPublished - 2002
イベント12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
継続期間: 2002 9月 152002 9月 20

出版物シリーズ

名前MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Other

Other12th International Conference on Molecular Beam Epitaxy, MBE 2002
国/地域United States
CitySan Francisco
Period02/9/1502/9/20

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料
  • 材料化学

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