Modification of the electric conduction at the pentacene SiO2 interface by surface termination of SiO2

Iwao Yagi, Kazuhito Tsukagoshi, Yoshinobu Aoyagi

研究成果: Article査読

139 被引用数 (Scopus)

抄録

A surface treatment method has been developed for the SiO2 Si substrate to control the electrical properties of pentacene thin-film transistors (TFTs). The surface treatment is performed by spin-coating 1,1,1,3,3,3-hexamethyldisilazane liquid, resulting in a drastic improvement of the off current although the surface treatment never shows a pronounced morphological change in the pentacene channel in comparison with the one on the nontreated substrate. The off current improvement directly enhances the transistor performance especially in the TFTs with a few monolayers channel thickness. The off current suppression could be caused by the reduction of the interfacial floating charge trapped at the pentacene SiO2 interface.

本文言語English
論文番号103502
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
86
10
DOI
出版ステータスPublished - 2005 3月 7
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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