Modification of magnetic nanocontact structure by a bias-voltage-induced stress and its influence on magnetoresistance effect in TaO x nano-oxide layer spin valve

Kousaku Miyake, Yosinobu Saki, Ayako Suzuki, Shohei Kawasaki, Masaaki Doi, Masashi Sahashi

研究成果: Article査読

抄録

A magnetic nanocontact spin valve (NCSV) was fabricated by inserting a TaO x nano-oxide layer (NOL) as the spacer layer. Currentperpendicular-to-film-plane (CPP) measurements revealed that the SV had a positive magnetoresistance (MR) ratio. When a high bias voltage was applied to the SV, the fine structure of the NOL changed i.e., the resistance and MR ratio of the device changed irreversibly. The change in device characteristics is attributed to a proportional change in the number of nonmagnetoresistive and magnetoresistive conductive channels in the SV upon high bias voltage application. The decrease in MR ratio accompanied the disappearance of the magnetic nanocontact, suggesting that the positive MR effect was partially due to the presence of magnetic nanocontacts.

本文言語English
論文番号063002
ジャーナルJapanese journal of applied physics
51
6 PART 1
DOI
出版ステータスPublished - 2012 6

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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