Models for plasmonic THz detectors based on graphene split-gate FETs with lateral p-n junctions

Maxim Ryzhii, Victor Ryzhii, Akira Satou, Taiichi Otsuji, Vladimir Mitin, Michael S. Shur

研究成果: Conference contribution

抄録

We propose and analyze the resonant plasmonic terahertz detectors based on the split-gate field-effect transistors with electrically induced p-n junctions and graphene and perforated graphene channels. The perforation of the p-n junction depletion region leads to the tunneling suppression and the substantial reinforcement of the detector resonant response.

本文言語English
ホスト出版物のタイトル2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016
編集者Peter Pichler, Eberhard Bar, Jurgen Lorenz
出版社Institute of Electrical and Electronics Engineers Inc.
ページ361-364
ページ数4
ISBN(電子版)9781509008179
DOI
出版ステータスPublished - 2016 10 20
イベント2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 - Nuremberg, Germany
継続期間: 2016 9 62016 9 8

出版物シリーズ

名前International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016
CountryGermany
CityNuremberg
Period16/9/616/9/8

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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