Modelling inter-dot Coulomb interaction effects in field effect transistors with an embedded quantum dot layer

C. Metzner, Go Yusa, H. Sakaki

研究成果: Article査読

5 被引用数 (Scopus)

抄録

By a computer simulation we study the real space and energy distributions of 0D electrons bound in a planar array of quantum dots, including both intra-dot charging and inter-dot Coulomb interaction effects, size fluctuations, as well as the screening by a parallel gas of 2D electrons. It is demonstrated that the mutual Coulomb shifts between different dots cause pronounced many-body correlation effects and in-plane potential fluctuations, which can be significant for experiments such as capacitance and tunneling spectroscopy. In addition we investigate the influence of charged dot scattering on the mobility of a conducting channel parallel to the dot layer.

本文言語English
ページ(範囲)537-549
ページ数13
ジャーナルSuperlattices and Microstructures
25
3
DOI
出版ステータスPublished - 1999 1 1
外部発表はい

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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