Modeling of static electrical properties in organic field-effect transistors

Yong Xu, Takeo Minari, Kazuhito Tsukagoshi, Romain Gwoziecki, Romain Coppard, Mohamed Benwadih, Jan Chroboczek, Francis Balestra, Gerard Ghibaudo

研究成果: Article査読

25 被引用数 (Scopus)

抄録

A modeling of organic field-effect transistors' (OFETs') electrical characteristics is presented. This model is based on a one-dimensional (1-D) Poisson's equation solution that solves the potential profile in the organic semiconducting film. Most importantly, it demonstrates that, due to the common open-surface configuration used in organic transistors, the conduction occurs in the film volume below threshold. This is because the potential at the free surface is not fixed to zero but rather rises also with the gate bias. The tail of carrier concentration at the free surface is therefore significantly modulated by the gate bias, which partially explains the gate-voltage dependent contact resistance. At the same time in the so-called subthreshold region, we observe a clear charge trapping from the difference between C-V and I-V measurements; hence a traps study by numerical simulation is also performed. By combining the analytical modeling and the traps analysis, the questions on the C-V and I-V characteristics are answered. Finally, the combined results obtained with traps fit well the experimental data in both pentacene and bis(triisopropylsilylethynyl)-pentacene OFETs.

本文言語English
論文番号014510
ジャーナルJournal of Applied Physics
110
1
DOI
出版ステータスPublished - 2011 7 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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