Modeling and simulation of polycrystalline ZnO thin-film transistors

Faruque M. Hossain, J. Nishii, S. Takagi, A. Ohtomo, T. Fukumura, H. Fujioka, H. Ohno, H. Koinuma, M. Kawasaki

研究成果: Article査読

276 被引用数 (Scopus)

抄録

The simulation and modeling results of polycrystalline ZnO thin-film transistors (TFT) were discussed. The simulation was performed by using a two-dimensional device simulator in order to determine the grain boundary effects on device performance. The density of total trap states, localized in the grain boundaries for polycrystalline ZnO TFT was estimated by determining the apparent mobility and grain size in the device. It was observed that much smaller nanoscaled grains in a polycrystalline ZnO TFT induce a strong overlap of the double Schottky barriers with a higher activation energy in the crystallite and a lower barrier potential in the grain boundary at subthreshold or off-state region of its transfer chracteristics.

本文言語English
ページ(範囲)7768-7777
ページ数10
ジャーナルJournal of Applied Physics
94
12
DOI
出版ステータスPublished - 2003 12 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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