Modeling and implementation of subthreshold characteristics of accumulation-mode MOSFETs for various SOI layer thickness and impurity concentrations

R. Kuroda; A. Teramoto; W. Cheng; S. Sugawa; T. Ohmi

doi:10.1109/SOI.2007.4357849

Modeling and implementation of subthreshold characteristics of accumulation-mode MOSFETs for various SOI layer thickness and impurity concentrations

R. Kuroda, A. Teramoto, W. Cheng, S. Sugawa, T. Ohmi

研究成果: Conference contribution

本文言語	English
ホスト出版物のタイトル	2007 IEEE International SOI Conference Proceedings
ページ	55-56
ページ数	2
DOI	https://doi.org/10.1109/SOI.2007.4357849
出版ステータス	Published - 2007
イベント	2007 IEEE International Systems-on-Chip Conference, SOI - Indian Wells, CA, United States 継続期間: 2007 10月 1 → 2007 10月 4

出版物シリーズ

名前	Proceedings - IEEE International SOI Conference
ISSN（印刷版）	1078-621X

Other

Other	2007 IEEE International Systems-on-Chip Conference, SOI
国/地域	United States
City	Indian Wells, CA
Period	07/10/1 → 07/10/4

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

文献へのアクセス

10.1109/SOI.2007.4357849

他のファイルとリンク

引用スタイル

Kuroda, R., Teramoto, A., Cheng, W., Sugawa, S., & Ohmi, T. (2007). Modeling and implementation of subthreshold characteristics of accumulation-mode MOSFETs for various SOI layer thickness and impurity concentrations. In 2007 IEEE International SOI Conference Proceedings (pp. 55-56). [4357849] (Proceedings - IEEE International SOI Conference). https://doi.org/10.1109/SOI.2007.4357849

Kuroda, R, Teramoto, A, Cheng, W, Sugawa, S & Ohmi, T 2007, Modeling and implementation of subthreshold characteristics of accumulation-mode MOSFETs for various SOI layer thickness and impurity concentrations. in 2007 IEEE International SOI Conference Proceedings., 4357849, Proceedings - IEEE International SOI Conference, pp. 55-56, 2007 IEEE International Systems-on-Chip Conference, SOI, Indian Wells, CA, United States, 07/10/1. https://doi.org/10.1109/SOI.2007.4357849

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