Mode transition between growth and decomposition of oxides on Si(001): Kinetically determined critical coverage for oxidation

Maki Suemitsu, Yoshiharu Enta, Youichi Takegawa, Nobuo Miyamoto

研究成果: Article査読

15 被引用数 (Scopus)

抄録

Effects of preoxidation on the reaction kinetics of oxygen molecules at Si(001) surface have been investigated by real-time ultraviolet photoelectron spectroscopy. A mode transition from decomposition to growth of surface oxides was found to exist at a certain initial oxide coverage, which is kinetically, not energetically, determined. By considering a change of balance between Si adatom and oxygen-monomer fluxes at the perimeter of oxide clusters, this mode transition is quantitatively described as a bifurcation of an autocatalytic-reaction rate equation.

本文言語English
ページ(範囲)3179-3181
ページ数3
ジャーナルApplied Physics Letters
77
20
DOI
出版ステータスPublished - 2000 11 13

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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