抄録
Passive mode locking of a bisectional GaInN quantum well laser diode was confirmed with external-cavity geometry. Optical pulses of 3 ps duration were produced by controlling the reverse-bias voltage applied to a saturable absorber section. These are the shortest optical pulses ever generated from GaN-based laser diodes.
本文言語 | English |
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論文番号 | 031112 |
ジャーナル | Applied Physics Letters |
巻 | 96 |
号 | 3 |
DOI | |
出版ステータス | Published - 2010 |
ASJC Scopus subject areas
- 物理学および天文学(その他)