Mobility enhancement in strained Si modulation-doped structures by chemical mechanical polishing

K. Sawano, S. Koh, Y. Shiraki, Y. Hirose, T. Hattori, K. Nakagawa

    研究成果: Article査読

    28 被引用数 (Scopus)

    抄録

    The mobility enhancement in strained Si modulation-doped (MOD) structure formed on the strain-relaxed SiGe buffer layer planarized by chemical mechanical polishing (CMP) was studied. It was found that at low temperatures, the enhancement reached a factor of 6. Results showed that the roughness scattering was reduced and the mobility of two-dimensional electron gas in the strained Si was increased by CMP.

    本文言語English
    ページ(範囲)412-414
    ページ数3
    ジャーナルApplied Physics Letters
    82
    3
    DOI
    出版ステータスPublished - 2003 1 20

    ASJC Scopus subject areas

    • 物理学および天文学(その他)

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