Mobility dependence of electron spin relaxation time in n-type InGaAs/InAlAs multiple quantum wells

T. Adachi, Y. Ohno, R. Terauchi, F. Matsukura, H. Ohno

研究成果: Conference article査読

9 被引用数 (Scopus)

抄録

We have measured electron spin relaxation time (τe) in undoped and n-type InGaAs/InAlAs quantum wells (QWs) as a function of electron quantized energy (E1e) and electron mobility (μ) at room temperature. For E1e dependence, the trend can be explained either by the D'yakonov-Perel' (DP) theory or by the Elliott-Yafet (EY) theory. On the other hand, it is difficult to explain the complex μ-dependence of τe by either of the theories. Our experimental results suggest that further improvement of the theories might be necessary to fully explain the relaxation mechanism in InGaAs QWs.

本文言語English
ページ(範囲)1015-1019
ページ数5
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
7
3
DOI
出版ステータスPublished - 2000 5
イベントMSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn
継続期間: 1999 7 121999 7 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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