Mn2VAl Heusler alloy thin films: Appearance of antiferromagnetism and exchange bias in a layered structure with Fe

Tomoki Tsuchiya; Ryota Kobayashi; Takahide Kubota; Kotaro Saito; Kanta Ono; Takashi Ohhara; Akiko Nakao; Koki Takanashi

doi:10.1088/1361-6463/aaa41a

Mn₂VAl Heusler alloy thin films: Appearance of antiferromagnetism and exchange bias in a layered structure with Fe

Tomoki Tsuchiya, Ryota Kobayashi, Takahide Kubota, Kotaro Saito, Kanta Ono, Takashi Ohhara, Akiko Nakao, Koki Takanashi

金属材料研究所・物質創製研究部

研究成果: Article › 査読

6 被引用数 (Scopus)

抄録

Mn₂VAl Heusler alloy films were epitaxially grown on MgO(1 0 0) single-crystal substrates by ultra-high-vacuum magnetron sputtering. A2- and L2₁-type Mn₂VAl order was controlled by the deposition temperature. A2-type Mn₂VAl films showed no spontaneous magnetization, while L2₁-type Mn₂VAl films showed ferrimagnetic behaviour with a maximum saturation magnetization of 220 emu cm^-3 at room temperature (RT). An antiferromagnetic reflection was observed with neutron diffraction at RT for an A2-type Mn₂VAl film deposited at 400 °C. A bilayer sample of the antiferromagnetic A2-type Mn₂VAl and Fe showed an exchange bias of 120 Oe at 10 K.

本文言語	English
論文番号	065001
ジャーナル	Journal of Physics D: Applied Physics
巻	51
号	6
DOI	https://doi.org/10.1088/1361-6463/aaa41a
出版ステータス	Published - 2018 1月 19

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
音響学および超音波学
表面、皮膜および薄膜

文献へのアクセス

10.1088/1361-6463/aaa41a

他のファイルとリンク

引用スタイル

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title = "Mn2VAl Heusler alloy thin films: Appearance of antiferromagnetism and exchange bias in a layered structure with Fe",

abstract = "Mn2VAl Heusler alloy films were epitaxially grown on MgO(1 0 0) single-crystal substrates by ultra-high-vacuum magnetron sputtering. A2- and L21-type Mn2VAl order was controlled by the deposition temperature. A2-type Mn2VAl films showed no spontaneous magnetization, while L21-type Mn2VAl films showed ferrimagnetic behaviour with a maximum saturation magnetization of 220 emu cm-3 at room temperature (RT). An antiferromagnetic reflection was observed with neutron diffraction at RT for an A2-type Mn2VAl film deposited at 400 °C. A bilayer sample of the antiferromagnetic A2-type Mn2VAl and Fe showed an exchange bias of 120 Oe at 10 K.",

keywords = "Heusler alloy, antiferromagnetism, exchange bias",

author = "Tomoki Tsuchiya and Ryota Kobayashi and Takahide Kubota and Kotaro Saito and Kanta Ono and Takashi Ohhara and Akiko Nakao and Koki Takanashi",

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T1 - Mn2VAl Heusler alloy thin films

T2 - Appearance of antiferromagnetism and exchange bias in a layered structure with Fe

AU - Tsuchiya, Tomoki

AU - Kobayashi, Ryota

AU - Kubota, Takahide

AU - Saito, Kotaro

AU - Ono, Kanta

AU - Ohhara, Takashi

AU - Nakao, Akiko

AU - Takanashi, Koki

PY - 2018/1/19

Y1 - 2018/1/19

N2 - Mn2VAl Heusler alloy films were epitaxially grown on MgO(1 0 0) single-crystal substrates by ultra-high-vacuum magnetron sputtering. A2- and L21-type Mn2VAl order was controlled by the deposition temperature. A2-type Mn2VAl films showed no spontaneous magnetization, while L21-type Mn2VAl films showed ferrimagnetic behaviour with a maximum saturation magnetization of 220 emu cm-3 at room temperature (RT). An antiferromagnetic reflection was observed with neutron diffraction at RT for an A2-type Mn2VAl film deposited at 400 °C. A bilayer sample of the antiferromagnetic A2-type Mn2VAl and Fe showed an exchange bias of 120 Oe at 10 K.

AB - Mn2VAl Heusler alloy films were epitaxially grown on MgO(1 0 0) single-crystal substrates by ultra-high-vacuum magnetron sputtering. A2- and L21-type Mn2VAl order was controlled by the deposition temperature. A2-type Mn2VAl films showed no spontaneous magnetization, while L21-type Mn2VAl films showed ferrimagnetic behaviour with a maximum saturation magnetization of 220 emu cm-3 at room temperature (RT). An antiferromagnetic reflection was observed with neutron diffraction at RT for an A2-type Mn2VAl film deposited at 400 °C. A bilayer sample of the antiferromagnetic A2-type Mn2VAl and Fe showed an exchange bias of 120 Oe at 10 K.

KW - Heusler alloy

KW - antiferromagnetism

KW - exchange bias

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