TY - JOUR
T1 - Mid-infrared intersubband electroluminescence in InAs/GaSb/AlSb type-II cascade structures
AU - Ohtani, K.
AU - Ohno, H.
N1 - Funding Information:
The authors thank Y. Ohno, H.C. Liu and T. Dietl for helpful discussions. This work was partly supported by a Grant-in-Aid for Scientific Research (A) (No. 11355012) from the Ministry of Education, Science, Sports and Culture, Japan and by ‘Research for the Future Program’ from the Japan Society for the promotion of Science (JSPS-RFTF 97P00202).
PY - 2000/4
Y1 - 2000/4
N2 - Mid-infrared intersubband light-emitting diodes based on InAs/GaSb/AlSb type-II cascade structure have been investigated. The observed emission energy is in good agreement with calculation based on the multi-band k · p theory. In contrast to interband cascade structures, dominant polarization of the emitted light is perpendicular to the quantum well layers. Structure dependence of intersubband electroluminescence is also presented.
AB - Mid-infrared intersubband light-emitting diodes based on InAs/GaSb/AlSb type-II cascade structure have been investigated. The observed emission energy is in good agreement with calculation based on the multi-band k · p theory. In contrast to interband cascade structures, dominant polarization of the emitted light is perpendicular to the quantum well layers. Structure dependence of intersubband electroluminescence is also presented.
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U2 - 10.1016/S1386-9477(99)00282-9
DO - 10.1016/S1386-9477(99)00282-9
M3 - Conference article
AN - SCOPUS:0033890419
SN - 1386-9477
VL - 7
SP - 80
EP - 83
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 1
T2 - The 5th International Conference on Intersubband Transitions in Quantum Wells (ITQW '99)
Y2 - 7 September 1999 through 11 September 1999
ER -