Microwave Annealing Technologies for Variability Reduction of Nanodevices: A Review of Their Impact on FinFETs

Kazuhiko Endo, Yao Jen Lee

研究成果: Review article査読

抄録

The rapid reduction of feature size in CMOS devices causes their variability to increase, thus reducing the circuit yield [1]-[3]. In particular, the static random access memory (SRAM) cell uses the smallest transistor to achieve high-density integration, the effect of which is a lower yield [4]. The reduction of variability is, therefore, becoming the most important concern for CMOS devices. In this article, we review the effectiveness of introducing multigate devices and microwave annealing (MWA) for performance enhancement.

本文言語English
論文番号8862822
ページ(範囲)34-38
ページ数5
ジャーナルIEEE Nanotechnology Magazine
13
6
DOI
出版ステータスPublished - 2019 12月

ASJC Scopus subject areas

  • 機械工学
  • 電子工学および電気工学

フィンガープリント

「Microwave Annealing Technologies for Variability Reduction of Nanodevices: A Review of Their Impact on FinFETs」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル