Microstructure of a CuPt-ordered GaInP alloy revealed by cross-sectional scanning tunneling microscopy

研究成果: Article査読

2 被引用数 (Scopus)

抄録

The microstructure of a CuPt-ordered GaInP alloy that includes antiphase boundaries (APBs) was studied by cross-sectional scanning tunneling microscopy. By selectively determining the arrangements of In and Ga atoms on a cleaved (110) surface, it was found that (1) the alloy is comprised of small domains (about 5-10 nm in size) of monolayer superlattices of GaP/InP along [̄111], and (2) the ordered domains are bounded by APBs, presumably lying on (̄111), (̄110), (001), or (1̄11), at which the sequence of GaP and InP layers along [̄111] is 180° out of phase. It was also found that (3) the atomic layers of InP, sandwiched between the ordered domains, are formed on parts of the APBs. It was suggested that the InP layers act as quantum wells and that they emit linearly polarized light parallel to the layers.

本文言語English
ページ(範囲)2357-2360
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
3 B
DOI
出版ステータスPublished - 2006 3 27
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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