Silicon borides in a boron content range of 80 to 94 mol% were prepared by arc-melting. As-melted specimens consisted of SiBn (hexagonal, n = 14-49) and free silicon. The free silicon content decreased with increasing boron content in raw materials. The arc-melted specimens were annealed in an argon atmosphere at 1663 K. By annealing for 1.8 ks, SiB4 phase formed at the Si-SiB4 boundary. By annealing for more than 5.4 ks, SiB6 phase formed and SiB4 phase disappeared. SiBn content increased with increasing annealing time. The annealing for 5.4 ks caused a great increase of the Seebeck coefficient.
|出版ステータス||Published - 1997 12 1|
|イベント||Proceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97 - Dresden, Ger|
継続期間: 1997 8 26 → 1997 8 29
|Other||Proceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97|
|Period||97/8/26 → 97/8/29|
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