Microstructure and thermoelectric properties of arc-melted silicon borides

Lidong Chen, Takashi Goto, Jianhui Li, Eiji Aoyagi, Toshio Hirai

研究成果: Paper査読

4 被引用数 (Scopus)

抄録

Silicon borides in a boron content range of 80 to 94 mol% were prepared by arc-melting. As-melted specimens consisted of SiBn (hexagonal, n = 14-49) and free silicon. The free silicon content decreased with increasing boron content in raw materials. The arc-melted specimens were annealed in an argon atmosphere at 1663 K. By annealing for 1.8 ks, SiB4 phase formed at the Si-SiB4 boundary. By annealing for more than 5.4 ks, SiB6 phase formed and SiB4 phase disappeared. SiBn content increased with increasing annealing time. The annealing for 5.4 ks caused a great increase of the Seebeck coefficient.

本文言語English
ページ215-218
ページ数4
出版ステータスPublished - 1997 12 1
イベントProceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97 - Dresden, Ger
継続期間: 1997 8 261997 8 29

Other

OtherProceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97
CityDresden, Ger
Period97/8/2697/8/29

ASJC Scopus subject areas

  • 工学(全般)

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