抄録
Thin films of Pb(Zr0.52Ti0.48)O3 (PZT) were prepared by pulsed laser deposition technique on Pt/Ti/SiO2/Si substrates using a template layer derived by sol-gel processing. Crystalline phases and microstructure of the PZT films were investigated by X-ray diffraction analysis and scanning electron microscopy, respectively. The use of the template layer favored the obtaining of (111) oriented crystalline PZT film with perovskite phase at relatively low temperature. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The PZT films fabricated by laser ablation on the template layer exhibited better ferroelectric properties than those derived directly on Pt/Ti/SiO2/Si. The remanent polarization and the coercive field of the film fabricated on the template layer and annealed at 650°C were 31.28 μC/cm2 and 45.29 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 1069 and 0.06, respectively.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 187-195 |
| ページ数 | 9 |
| ジャーナル | Integrated Ferroelectrics |
| 巻 | 46 |
| DOI | |
| 出版ステータス | Published - 2002 1月 1 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 制御およびシステム工学
- セラミックおよび複合材料
- 凝縮系物理学
- 電子工学および電気工学
- 材料化学