Microstructural and magnetic characteristics of IrMn exchange-biased tunnel junctions

Andrew C.C. Yu, X. F. Han, J. Murai, Y. Ando, T. Miyazaki, K. Hiraga

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Tunneling magnetoresistance values above 20% and 40% were obtained for as-deposited and annealed tunnel junctions, Ta/NiFe/Cu/NiFe/IrMn/CoFe/Al-oxide/CoFe/NiFe/Ta, respectively. Exchange biasing field increased from 270 to 550 Oe after annealing resulting from sharpening of the IrMn/CoFe interface. dV/dI vs. V curves showed asymmetric profiles, which were due to asymmetry of the CoFe/Al-oxide interfaces and difference in microstructure of the CoFe layers.

本文言語English
ページ(範囲)130-133
ページ数4
ジャーナルJournal of Magnetism and Magnetic Materials
240
1-3
DOI
出版ステータスPublished - 2002 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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