Microscopic identification of dopant atoms in Mn-doped GaAs layers

T. Tsuruoka, R. Tanimoto, N. Tachikawa, S. Ushioda, Fumihiro Matsukura, Hideo Ohno

研究成果: Article査読

19 被引用数 (Scopus)

抄録

Using cross-sectional scanning tunneling microscopy (XSTM), we have identified the dopant atoms in Mn-doped GaAs layers grown at 400 °C by molecular-beam epitaxy. The Mn-dopant atoms appeared as diffuse light areas superimposed on the background of As atomic rows in the STM images. The Mn acceptor concentration deduced from the STM images agreed well with the hole concentration determined by Hall measurements. No As antisite and associated defects were observed. These results indicate that Mn atoms are incorporated into the GaAs layer as electrically activated acceptors.

本文言語English
ページ(範囲)79-82
ページ数4
ジャーナルSolid State Communications
121
2-3
DOI
出版ステータスPublished - 2002 1月 2

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

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