A micropattern of inorganic thin film was formed by heat treatment of a polyalkylsilyne film at 300 °C after UV irradiation with photomask. The Si-Si chain of spin-coated polyalkylsilyne film was photooxidized by UV irradiation with photomask in air. The XPS spectra showed that the Si-O-Si chain of the UV-irradiated part changed into SÌO2 upon heat treatment in vacuo. On the other hand, the heat treatment changed the masked part into an a-Si-like structure with low optical band gap. The micrograph demonstrated lines of the irradiated area and spaces of the masked area.
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