Microfabrication of a scanning probe with NV centers in a selectively grown diamond thin film through a xenon difluoride etching process

A scanning probe with nitrogen vacancy (NV) centers in diamond thin film was fabricated via a standard micro/nano electromechanical system process. The diamond thin film was selectively grown by microwave plasma enhanced chemical vapor deposition on a partially nucleated silicon surface. NV centers are embedded during the diamond growth with a pure nitrogen gas flow to the growth chamber. The existence of NV centers in the diamond thin film was confirmed by photoluminescence measurements. In addition, we found that a xenon difluoride (XeF₂) etching process and anneal treatment have an influence on the existence of NV centers in the diamond. The fabricated scanning probe with NV centers in diamond thin film can be used as a magnetic scanning sensor. It is anticipated that the alternative method of selectively growing diamond thin film provides various diamond structures in diverse applications.