MgxZn1-xO epitaxial films grown on ZnO substrates by molecular beam epitaxy

H. Yuji, K. Nakahara, K. Tamura, S. Akasaka, A. Sasaki, T. Tanabe, H. Takasu, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, M. Kawasaki

研究成果: Conference contribution

12 被引用数 (Scopus)

抄録

Thin films of ZnO and MgxZn1-xO were epitaxially grown on Zn-polar ZnO substrates by plasma assisted molecular beam epitaxy. The miscut of c-plane ZnO substrates toward the [1-100] axis direction leads to a flat substrate surface with straight step edges. The growth mode of epitaxial ZnO films significantly depended on the growth temperature, and a substrate temperature over 800°C was needed for flat film surfaces with monolayer-height steps. Photoluminescence (PL) peak originating from the n = 2 state of A-free excitons was observed at 12 K for the ZnO films grown under stoichiometric and O-rich growth conditions. MgxZn1-xO films were also fabricated under Zn-rich conditions. The film surface exhibited a step-and-terrace structure. The effective PL lifetime of Mg 0.08Zn0.92O film was as long as 1.9 ns, which is the highest value ever reported, presumably due to a high purity level of the film.

本文言語English
ホスト出版物のタイトルZinc Oxide Materials and Devices III
DOI
出版ステータスPublished - 2008
イベントZinc Oxide Materials and Devices III - San Jose, CA, United States
継続期間: 2008 1月 202008 1月 23

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
6895
ISSN(印刷版)0277-786X

Other

OtherZinc Oxide Materials and Devices III
国/地域United States
CitySan Jose, CA
Period08/1/2008/1/23

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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