METHACRYLATED SILICONE-BASED NEGATIVE PHOTORESIST FOR HIGH RESOLUTION BILAYER RESIST SYSTEMS.

Masao Morita, Akinobu Tanaka, Katsuhide Onose

研究成果: Article査読

20 被引用数 (Scopus)

抄録

We propose a new photoresist (MSNR: methacrylated silicone-based negative resist) for high resolution bilayer resist systems. This photoresist shows high sensitivity to near-UV light (350-450 nm), D**0**. **5//n equals 40 mJ/cm**2, and excellent resistance to reactive ion etching with oxygen. A submicron (0. 5 mu m) pattern with a high aspect ratio can be easily fabricated with MSNR/AZ bilayer resist systems using near-UV lithography.

本文言語English
ページ(範囲)414-417
ページ数4
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
4
1
DOI
出版ステータスPublished - 1986 1
外部発表はい

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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