BaTi03 thin films were prepared on MgO(lOO) substrates by chemical vapor deposition using barium /Tdiketonate [Ba(C11H1902)2] and titanium tetraisopropoxide TiOCH(CH3)4 as metalorganic precursors. BaTi03 films deposited at 800-1000°C showed prominent tf-axis orientation perpendicular to the substrate surface. The deposition rate of these films was 1.0-1.2 fim/h. The rocking curve of BaTiO3(200) reflection from the film deposited at 800°C indicated strong crystallographic orientation. The epitaxial relationship between the film and the substrate was found by X-ray pole figure analysis. The relative dielectric constant of a polycrystalline BaTi03 film prepared on a Pt(100) /MgO(lOO) substrate at 800°C was 1040 (10 kHz, 20 V/cm).
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