Metal-semiconductor amorphous and nanoscale Ge-phase composites produced by rapid solidification and by devitrification of an amorphous matrix

研究成果: Article査読

4 被引用数 (Scopus)

抄録

In the current paper, we review our recent studies and present new data on Ge- and Si-based amorphous and composite alloys containing nanoscale semi-conductive Ge or Ge(Si) solid solution particles homogeneously distributed in a conductive amorphous matrix formed by rapid solidification or by devitrification of an amorphous single phase. Ge-rich alloys containing up to 70 at.% Ge were produced in Ge-Al-Cr-RE (RE, rare earth elements) systems, while Si-based amorphous alloys containing up to 60 at.% Si were produced in Si-Al-TM (TM, transition metals) systems by the melt-spinning technique. The samples are ribbons 10-100 μm thick. Nanocomposites in Si-Al-TM-Ge and some Ge-Al-Cr-RE alloys were produced directly by rapid solidification, while in the Ge 55Mg 35Y 10 alloy they were produced by devitrification of the glassy phase on heating. The semiconductive nanoparticles exhibit homogeneous distribution, and their sizes vary from ∼5 nm to 20 nm. The structure, phase transformations, and properties of the samples are discussed.

本文言語English
ページ(範囲)1986-1992
ページ数7
ジャーナルJournal of Electronic Materials
35
11
DOI
出版ステータスPublished - 2006 11月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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