We have investigated an atomic layer deposition (ALD) of ZrO2 or HfO2 by using a metal-organic (MO) precursor. As MO precursors are very sensitive to H2O and have much carbon content, we used oxygen plasma instead of H2O in order to suppress the background reaction with H2O and reduce carbon contamination. As a result, we achieved an ALD proved by a self-limiting adsorption of MO precursor. The carbon content in the films was suppressed due to highly reactive oxygen plasma. The leakage current of the film with plasma oxidation is much lower than that of film with H2O oxidation.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 2003 6月 15|
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