Metal organic atomic layer deposition of high-k gate dielectrics using plasma oxidation

Kazuhiko Endo, Toru Tatsumi

研究成果: Article査読

29 被引用数 (Scopus)

抄録

We have investigated an atomic layer deposition (ALD) of ZrO2 or HfO2 by using a metal-organic (MO) precursor. As MO precursors are very sensitive to H2O and have much carbon content, we used oxygen plasma instead of H2O in order to suppress the background reaction with H2O and reduce carbon contamination. As a result, we achieved an ALD proved by a self-limiting adsorption of MO precursor. The carbon content in the films was suppressed due to highly reactive oxygen plasma. The leakage current of the film with plasma oxidation is much lower than that of film with H2O oxidation.

本文言語English
ページ(範囲)L685-L687
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
42
6 B
出版ステータスPublished - 2003 6月 15
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

フィンガープリント

「Metal organic atomic layer deposition of high-k gate dielectrics using plasma oxidation」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル