Metal-insulator transition and pseudogap in Bi1.76Pb0.35Sr1.89CuO6+δ high- Tc cuprates

M. Miyazaki, R. Kadono, M. Hiraishi, A. Koda, K. M. Kojima, Y. Fukunaga, Y. Tanabe, T. Adachi, Y. Koike

研究成果: Article査読

抄録

It is inferred from bulk-sensitive muon Knight shift measurement for a Bi1.76Pb0.35Sr1.89CuO6+δ single-layer cuprate that the metal-insulator (MI) transition (in the low-temperature limit, T→0) occurs at the critical hole concentration p=pMI=0.09(1), where the electronic density of states (DOS) at the Fermi level is reduced to zero by the pseudogap irrespective of the Néel order or spin glass magnetism. Superconductivity also appears for p>pMI, suggesting that this feature is controlled by the MI transition. More interestingly, the magnitude of the DOS reduction induced by the pseudogap remains unchanged over a wide doping range (0.1≤p≤0.2), indicating that the pseudogap remains as a hallmark of the MI transition for p>pMI.

本文言語English
論文番号115123
ジャーナルPhysical Review B
94
11
DOI
出版ステータスPublished - 2016 9 9

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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