Metal-induced gap states in epitaxial organic-insulator/metal interfaces

Manabu Kiguchi, Ryotaro Arita, Genki Yoshikawa, Yoshiaki Tanida, Susumu Ikeda, Shiro Entani, Ikuyo Nakai, Hiroshi Kondoh, Toshiaki Ohta, Koichiro Saiki, Hideo Aoki

研究成果: Article査読

18 被引用数 (Scopus)

抄録

We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown organic insulator/metal interfaces. The experiment is done for alkane/Cu(001) with an element-selective near edge x-ray absorption fine structure (NEXAFS), which exhibits a prepeak indicative of MIGS. An ab initio electronic structure calculation supports the existence of the MIGS. When the Cu substrate is replaced with Ni, an interface magnetism may be possible with a carrier doping.

本文言語English
論文番号075446
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
72
7
DOI
出版ステータスPublished - 2005 8 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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