Using ion implantated material as a growth source, implant source growth, is an alternative growth method where ion implanted atoms diffuse to the surface and can be used to form nanostructures. By introducing a small amount of a steel based contaminate we were able to grow high quality and high density GaN nanodots on Si(111) which showed strong excitonic UV luminescence. Furthermore by varying the implanted Ga dose and annealing conditions, the size of the nanodots can be controlled. This method for producing GaN nanostructures may be useful for optical or electronic device applications.
|ジャーナル||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版ステータス||Published - 2007 12 1|
|イベント||International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan|
継続期間: 2006 10 22 → 2006 10 27
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