Metal catalyst enhanced growth of high quality and density GaN dots on Si(111) by implant source growth

Ryan Buckmaster, Takenari Goto, Takashi Hanada, Katsushi Fujii, Takashi Kato, Takafumi Yao

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

Using ion implantated material as a growth source, implant source growth, is an alternative growth method where ion implanted atoms diffuse to the surface and can be used to form nanostructures. By introducing a small amount of a steel based contaminate we were able to grow high quality and high density GaN nanodots on Si(111) which showed strong excitonic UV luminescence. Furthermore by varying the implanted Ga dose and annealing conditions, the size of the nanodots can be controlled. This method for producing GaN nanostructures may be useful for optical or electronic device applications.

本文言語English
ページ(範囲)2314-2317
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
4
7
DOI
出版ステータスPublished - 2007 12 1
イベントInternational Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan
継続期間: 2006 10 222006 10 27

ASJC Scopus subject areas

  • 凝縮系物理学

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