This paper describes the development of the aluminum nitride (AIN) thin film bulk acoustic resonator (FBAR) using noble MEMS techniques for CMOS integration. This resonator has an air gap between a substrate for acoustic isolation. Germanium (Ge) was used as a sacrificial layer to make the air gap. This technique gives simple process and high CMOS compatibility. The resonator achieved a Q factor of 780 and an effective electro-mechanical coupling constant (keff2) of 5.36 % at a resonant frequency of 2 GHz.
|ジャーナル||IEEE MTT-S International Microwave Symposium Digest|
|出版ステータス||Published - 2003 8 18|
|イベント||2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States|
継続期間: 2003 6 8 → 2003 6 13
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering