Mechanism of oxide deformation during silicon thermal oxidation

H. Kageshima, M. Uematsu, K. Akagi, S. Tsuneyuki, T. Akiyama, K. Shiraishi

研究成果: Conference article査読

15 被引用数 (Scopus)

抄録

Mechanisms of oxide deformation during silicon thermal oxidation are studied by investigating the energetics of intrinsic point defects in the bulk silicon oxide and in the oxide film of the silicon oxide/silicon interface with first-principles calculations. The results suggest that the SiO2 and the SiO interstitials are thought to relate to the deformation of the silicon oxide. Especially, during the silicon oxidation, the SiO interstitial is suggested to be important because it can be formed in the oxide film neighboring to the interface and can enhance the deformation of the oxide films.

本文言語English
ページ(範囲)407-410
ページ数4
ジャーナルPhysica B: Condensed Matter
376-377
1
DOI
出版ステータスPublished - 2006 4月 1
外部発表はい
イベントProceedings of the 23rd International Conference on Defects in Semiconductors -
継続期間: 2005 7月 242005 7月 29

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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