Mechanism of mechanical deterioration in silicon microcantilever induced by plasma process

Maju Tomura, Chi Hsein Huang, Seiji Samukawa, Yusuke Yoshida, Takahito Ono, Satoshi Yamasaki

研究成果: Conference contribution

抄録

We investigated the influences of the defects generated by plasma on a silicon (Si) microcantilever. The E' center density of the microcantilever was drastically increased after Ar plasma irradiation. The mechanical characteristics, including resonant frequency (f) and the mechanical quality (Q) factor of a microcantilever were drastically decreased by plasma irradiation, which revealed that plasma irradiation deteriorated the mechanical characteristics of the micro element. Our results revealed that deterioration of f and Q factor depended on Young's modulus of microcantilevers and the ratio of defect depth to microcantilevers thickness respectively. Furthermore, These results showed considerable impact on Micro- and Nano-Electro-Mechanical Systems.

本文言語English
ホスト出版物のタイトルIEEE Sensors 2010 Conference, SENSORS 2010
ページ2534-2537
ページ数4
DOI
出版ステータスPublished - 2010
イベント9th IEEE Sensors Conference 2010, SENSORS 2010 - Waikoloa, HI, United States
継続期間: 2010 11 12010 11 4

出版物シリーズ

名前Proceedings of IEEE Sensors

Other

Other9th IEEE Sensors Conference 2010, SENSORS 2010
CountryUnited States
CityWaikoloa, HI
Period10/11/110/11/4

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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