Mechanism for improvement of in-plane alignment of SmBa2Cu3Oy films by BaZrO3 buffer layer on MgO substrate

Katsuya Hasegawa, Teruo Izumi, Yuh Shiohara, Yoshihiro Sugawara, Tsukasa Hirayama, Fumiyasu Oba, Yuichi Ikuhara

研究成果: Article査読

5 被引用数 (Scopus)

抄録

A BaZrO3 (BZO) buffer layer improved in-plane alignment of SmBa2Cu3Oy (Sm123) films on MgO substrate. The reason for the effect of the BZO on the growth of Sm123 films can not be explained only by the idea of a simple lattice match, since the lattice constant of BZO is close to that of MgO. Then, a qualitative model of interfacial energy including a chemical contribution was introduced based on crystallographic consideration. The interface structure of the Sm123/BZO was observed by high-resolution transmission electron microscopy. The results indicated that the terminate plane consists of the BaO layer which is included in common both for the BZO and the Sm123 crystal structures. Further, the interfacial energies were investigated through the first-principles method. The calculated interfacial energy for a model of the Sm123/BZO interface with the BaO terminate plane was fairly lower than that of the Sm123/MgO one. Additionally, the effect of interfacial energies for hetero-epitaxial growth was discussed in view of heterogeneous nucleation. Thus, it was revealed that the BZO buffer layer plays an important role to reduce interfacial energy which leads to high possibility of the better hetero-epitaxial relationship.

本文言語English
ページ(範囲)295-301
ページ数7
ジャーナルNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
67
6
DOI
出版ステータスPublished - 2003 6月
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 材料力学
  • 金属および合金
  • 材料化学

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