Mechanical stress simulation during gate formation of MOS devices considering crystallization-induced stress of phosphorus-doped silicon thin films

Hideo Miura, Naoto Saito, Noriaki Okamoto

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Mechanical stress in silicon substrates, caused by thin-film deposition of gate material of MOS transistors, is analysed by the finite element method. The internal stress change of the thin film due to crystallization during high temperature annealing is taken into account in the stress analysis. The results reveal that it is very important to design and control mechanical stress at the gate edges, which is caused not only by thermal stress but also by internal stress of the gate materials, in order to eliminate dislocations at gate edges and to improve device reliability.

本文言語English
ページ(範囲)249-253
ページ数5
ジャーナルMicroelectronics Journal
26
2-3
DOI
出版ステータスPublished - 1995 1月 1
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料
  • 表面、皮膜および薄膜
  • 凝縮系物理学
  • 原子分子物理学および光学
  • 制御およびシステム工学

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