TY - JOUR
T1 - Mechanical property and dislocation dynamics of GaAsP alloy semiconductor
AU - Yonenaga, Ichiro
AU - Sumino, Koji
AU - Izawa, Gunzo
AU - Watanabe, Hisao
AU - Matsui, Junji
N1 - Funding Information:
The authors are grateful to Dr. T. Hibiya of NEC Corporation for supply of a GaAsP crystal. They also thank Dr. K. Sera of Cyclotron and Radioisotope Center of To-hoku University for determining the composition of the used GaAsP by PIXE technique. This work was supported in part by Scientific Research Grant-in-Aid No. 60222005, "Alloy Semiconductor Physics and Electronics," from the Ministry of Education, Science and Culture of Japan.
PY - 1989/4
Y1 - 1989/4
N2 - The mechanical behavior of GaAsP alloy semiconductor was investigated by means of compressive deformation and compared with those of GaAs and GaP. The nature of collective motion of dislocations during deformation was determined by strain-rate cycling tests. The dynamic characteristics of dislocations in GaAsP were found to be similar to those in elemental and compound semiconductors such as Si, Ge, GaAs, and GaP. An alloy semiconductor has a component of the flow stress that is temperature-insensitive and is absent in compound semiconductors.
AB - The mechanical behavior of GaAsP alloy semiconductor was investigated by means of compressive deformation and compared with those of GaAs and GaP. The nature of collective motion of dislocations during deformation was determined by strain-rate cycling tests. The dynamic characteristics of dislocations in GaAsP were found to be similar to those in elemental and compound semiconductors such as Si, Ge, GaAs, and GaP. An alloy semiconductor has a component of the flow stress that is temperature-insensitive and is absent in compound semiconductors.
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U2 - 10.1557/JMR.1989.0361
DO - 10.1557/JMR.1989.0361
M3 - Article
AN - SCOPUS:0024621656
VL - 4
SP - 361
EP - 365
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 2
ER -