Mechanical property and dislocation dynamics of GaAsP alloy semiconductor

Ichiro Yonenaga, Koji Sumino, Gunzo Izawa, Hisao Watanabe, Junji Matsui

研究成果: Article査読

16 被引用数 (Scopus)

抄録

The mechanical behavior of GaAsP alloy semiconductor was investigated by means of compressive deformation and compared with those of GaAs and GaP. The nature of collective motion of dislocations during deformation was determined by strain-rate cycling tests. The dynamic characteristics of dislocations in GaAsP were found to be similar to those in elemental and compound semiconductors such as Si, Ge, GaAs, and GaP. An alloy semiconductor has a component of the flow stress that is temperature-insensitive and is absent in compound semiconductors.

本文言語English
ページ(範囲)361-365
ページ数5
ジャーナルJournal of Materials Research
4
2
DOI
出版ステータスPublished - 1989 4月
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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