TY - GEN
T1 - Measurement of the residual stress distribution in the 3D-stacked electronic modules by embedded strain sensors
AU - Mizuno, Ryota
AU - Nakauchi, Genta
AU - Suzuki, Ken
AU - Miura, Hideo
N1 - Funding Information:
This research activity has been supported partially by Japanese special coordination funds for promoting science and technology, Japanese Grants-in-aid for Scientific Research, and Tohoku University. This research was supported partly by JSPS KAKENHI Grant Number JP16H06357.
Publisher Copyright:
Copyright © 2019 ASME.
PY - 2019
Y1 - 2019
N2 - In this study, micro-scale strain sensors were embedded in a silicon chip to measure the variation of the local stress distribution around thin film interconnections used for 3D semiconductor modules. Piezoresistive effect of single crystal silicon was applied to the sensors. The stress sensitivity at room temperature was 1.3 MPa/Ω. Even though the stress sensitivity varied as a strong function of temperature, it was confirmed that this sensor can measure the stress distribution quantitatively in the temperature range from room temperature to 8°C at most. And the variation of the residual stress in electroplated copper thin films during heat treatment was investigated from the viewpoint of the change of stress amplitude during a thermal cycle. From the obtained results, it was confirmed that the recrystallization occurred when the films were annealed at only 200°C, and the change of the micro textue of the films caused the change of their residual stress. Therefore, it is very important to control the micro texture during electroplating for assuring long term reliability of interconnections.
AB - In this study, micro-scale strain sensors were embedded in a silicon chip to measure the variation of the local stress distribution around thin film interconnections used for 3D semiconductor modules. Piezoresistive effect of single crystal silicon was applied to the sensors. The stress sensitivity at room temperature was 1.3 MPa/Ω. Even though the stress sensitivity varied as a strong function of temperature, it was confirmed that this sensor can measure the stress distribution quantitatively in the temperature range from room temperature to 8°C at most. And the variation of the residual stress in electroplated copper thin films during heat treatment was investigated from the viewpoint of the change of stress amplitude during a thermal cycle. From the obtained results, it was confirmed that the recrystallization occurred when the films were annealed at only 200°C, and the change of the micro textue of the films caused the change of their residual stress. Therefore, it is very important to control the micro texture during electroplating for assuring long term reliability of interconnections.
KW - Electroplated copper
KW - Piezoresistive effect of silicon
KW - Residual stress
KW - Strain sensor
KW - Thin film interconnection
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U2 - 10.1115/IMECE2019-11106
DO - 10.1115/IMECE2019-11106
M3 - Conference contribution
AN - SCOPUS:85078679434
T3 - ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)
BT - Micro- and Nano-Systems Engineering and Packaging
PB - American Society of Mechanical Engineers (ASME)
T2 - ASME 2019 International Mechanical Engineering Congress and Exposition, IMECE 2019
Y2 - 11 November 2019 through 14 November 2019
ER -