Measurement for thermal effusivity of AlxGa1-xN alloys using thermoreflectance with periodic heating

Hiroyuki Shibata, Hiromichi Ohta, Takashi Nemoto, Shun Nagayama, Yoshio Waseda, Katsushi Fujii, K. Thomas Jacob

    研究成果: Article査読

    3 被引用数 (Scopus)

    抄録

    AlxGa1-xN alloys with x=0.375, 0.398, 0.401, 0.592 and 0.696 were deposited on sapphire substrate by the hydride-vapor-phase epitaxy (HVPE) method. Thermal effusivity measurements were carried out on AlxGa1-xN alloys using a thermal microscope at room temperature. The lag between a sinusoidal heating laser wave and thermoreflectance wave was used to measure the thermal diffusivity. Thermal conductivity values of the AlxGa1-xN alloys were also obtained as a function of AlN mole fraction in the alloy. The thermal conductivity was found to decrease with increasing AlN fraction and the experimental data agree with values estimated using the virtual crystal model.

    本文言語English
    ページ(範囲)515-522
    ページ数8
    ジャーナルHigh Temperature Materials and Processes
    29
    5-6
    DOI
    出版ステータスPublished - 2010

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Physical and Theoretical Chemistry

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