TY - JOUR
T1 - “Manipulation” of Crystal Structure by Methylthiolation Enabling Ultrahigh Mobility in a Pyrene-Based Molecular Semiconductor
AU - Takimiya, Kazuo
AU - Bulgarevich, Kirill
AU - Abbas, Mamatimin
AU - Horiuchi, Shingo
AU - Ogaki, Takuya
AU - Kawabata, Kohsuke
AU - Ablat, Abduleziz
N1 - Funding Information:
The authors gratefully acknowledge the Supercomputer System in the Advanced Center for Computing and Communication (ACCC) of RIKEN for support in theoretical calculations. The authors also thank the Center for Computational Materials Science, Institute for Materials Research, Tohoku University for the use of MASAMUNE‐IMR (MAterials science Supercomputing system for Advanced MUlti‐scale simulations towards NExt‐generation‐Institute for Materials Research). This work was financially supported by JSPS KAKENHI (Grant Nos. JP19H00906, JP20K22421, and JP20H05865) and the Mitsubishi Foundation. The authors also thank the Bilateral Programs between Japan and France supported by JSPS and CNRS. A.A. acknowledges the financial support of the French government PAUSE program.
Funding Information:
The authors gratefully acknowledge the Supercomputer System in the Advanced Center for Computing and Communication (ACCC) of RIKEN for support in theoretical calculations. The authors also thank the Center for Computational Materials Science, Institute for Materials Research, Tohoku University for the use of MASAMUNE-IMR (MAterials science Supercomputing system for Advanced MUlti-scale simulations towards NExt-generation-Institute for Materials Research). This work was financially supported by JSPS KAKENHI (Grant Nos. JP19H00906, JP20K22421, and JP20H05865) and the Mitsubishi Foundation. The authors also thank the Bilateral Programs between Japan and France supported by JSPS and CNRS. A.A. acknowledges the financial support of the French government PAUSE program.
Publisher Copyright:
© 2021 The Authors. Advanced Materials published by Wiley-VCH GmbH
PY - 2021/8/12
Y1 - 2021/8/12
N2 - Control and prediction of crystal structures of molecular semiconductors are considered challenging, yet they are crucial for rational design of superior molecular semiconductors. It is here reported that through methylthiolation, one can rationally control the crystal structure of pyrene derivatives as molecular semiconductors; 1,6-bis(methylthio)pyrene keeps a similar sandwich herringbone structure to that of parent pyrene, whereas 1,3,6,8-tetrakis(methylthio)pyrene (MT-pyrene) takes a new type of brickwork structure. Such changes in these crystal structures are explained by the alteration of intermolecular interactions that are efficiently controlled by methylthiolation. Single crystals of MT-pyrene are evaluated as the active semiconducting material in single-crystal field-effect transistors (SC-FETs), which show extremely high mobility (32 cm2 V−1 s−1 on average) operating at the drain and gate voltages of −5 V. Moreover, the band-like transport and very low trap density are experimentally confirmed for the MT-pyrene SC-FETs, testifying that the MT-pyrene is among the best molecular semiconductors for the SC-FET devices.
AB - Control and prediction of crystal structures of molecular semiconductors are considered challenging, yet they are crucial for rational design of superior molecular semiconductors. It is here reported that through methylthiolation, one can rationally control the crystal structure of pyrene derivatives as molecular semiconductors; 1,6-bis(methylthio)pyrene keeps a similar sandwich herringbone structure to that of parent pyrene, whereas 1,3,6,8-tetrakis(methylthio)pyrene (MT-pyrene) takes a new type of brickwork structure. Such changes in these crystal structures are explained by the alteration of intermolecular interactions that are efficiently controlled by methylthiolation. Single crystals of MT-pyrene are evaluated as the active semiconducting material in single-crystal field-effect transistors (SC-FETs), which show extremely high mobility (32 cm2 V−1 s−1 on average) operating at the drain and gate voltages of −5 V. Moreover, the band-like transport and very low trap density are experimentally confirmed for the MT-pyrene SC-FETs, testifying that the MT-pyrene is among the best molecular semiconductors for the SC-FET devices.
KW - band-like transport
KW - crystal structure
KW - organic semiconductor
KW - single-crystal field-effect transistor
KW - ultrahigh mobility
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U2 - 10.1002/adma.202102914
DO - 10.1002/adma.202102914
M3 - Article
C2 - 34219291
AN - SCOPUS:85109143723
SN - 0935-9648
VL - 33
JO - Advanced Materials
JF - Advanced Materials
IS - 32
M1 - 2102914
ER -