Manifestation of local magnetic domain reversal by spin-polarized carrier injection in (Ga,Mn)As thin films

A. Oiwa, R. Moriya, Y. Mitsumori, T. Słupinski, H. Munekata

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Recently, we have reported that the spin-polarized holes generated by the irradiation with circularly polarized light can change the magnetization orientation of III-V ferromagnetic semiconductor (Ga,Mn) As via p-d exchange interaction. In this paper, we report that a small portion of change does not return to the initial state after the light is turned off. This residual component, named as the memorization effect, exhibits ferromagnetic characteristics. This fact strongly suggests that small magnetic domains having the perpendicular magnetic axis are rotated by photogenerated carrier spins.

本文言語English
ページ(範囲)439-442
ページ数4
ジャーナルJournal of Superconductivity and Novel Magnetism
16
2
出版ステータスPublished - 2003
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

フィンガープリント

「Manifestation of local magnetic domain reversal by spin-polarized carrier injection in (Ga,Mn)As thin films」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル